PD85035S-E PD85035S RF POWER transistor LDMOST 870MHz 35W 13.6V

Description

Part No.  ：     PD85035S-E  .  PD85035S
Description ： 35W 870MHz  13.6V
RF POWER transistor, LDMOST plastic family N-Channel
enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 35 W with 14.9 dB gain @ 870 MHz /
13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC1 European
directive
Description
The PD85035-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD85035-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85035-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
Maker：STM
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