TGA2216-SM 0.1 - 3.0 GHz, 10 Watt GaN Power Amplifier 1PCS

Description

Part No. ： TGA2216-SM
0.1 - 3.0 GHz, 10 Watt GaN Power Amplifier
Key Features :
Frequency range: 0.1-3.0 GHz
PSat: > 40dBm @ Pin=27dBm
P1dB: > 35dBm
PAE: 50% (midband)
Large signal gain: > 13dB
Small signal gain: 21 dB
Input return loss: > 8dB
Output return loss: > 11dB
Bias: Vd = 40 V, Idq = 360 mA, Vg1 = -2.4 V typical, Vg2 = +17.7V typical
Wideband flat gain and power
Dimensions: 5.0 x 5.0 x 1.45 mm
TGA2216-SM is a wideband cascode amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40V operation. The TGA2216-SM operates from 0.1 - 3.0GHz and provides 10W of saturated output power with greater than 13dB of large signal gain and greater than 40% power-added efficiency.
The TGA2216-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare.The TGA2216-SM is fully matched to 50 ohms at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.
Lead-free and RoHS compliant.
Typical Applications
Commercial Radar
Communication Systems
Electronic Warfare
Military Radar
Multi-Band VSAT
Cellular Infrastructure Base Station
Maker ：
TRIQUINT [TriQuint Semiconductor]
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Maker ：
TRIQUINT [TriQuint Semiconductor]
Payment