TGF2160 DC - 20 GHz 1600 um Discrete GaAs pHEMT 1pcs

Description

Part No. ： TGF2160
Key Features :
DC - 20 GHz 1600 um Discrete GaAs pHEMT
Frequency range: DC - 20 GHz
32.5 dBm typical output power - P1dB
10.4 dB typical gain @ 12 GHz
63% PAE typical @ 12 GHz
No vias
Technology: 0.25 um GaAs pHEMT
TGF2160 is a discrete 1600-Micron pHEMT which operates from DC to 20 GHz. The TGF2160 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2160 typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB and 63% power-added efficiency at 1 dB compression. This performance makes the TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Typical Applications
Aerospace
Broadband Wireless
Commercial
Defense
High Reliability
Test and Measurement
Maker ：
TRIQUINT [TriQuint Semiconductor]
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Maker ：
TRIQUINT [TriQuint Semiconductor]
Payment